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PD - 94578
IRFB17N60K
SMPS MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
HEXFET(R) Power MOSFET
VDSS
600V
RDS(on) typ.
0.35
ID
17A
Benefits l Smaller TO-220 Package l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
TO-220AB
Max.
17 11 68 340 2.7 30 11 -55 to + 150 300 10
Units
A W W/C V V/ns
C N
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
330 17 34
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.37 --- 58
Units
C/W
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1
11/19/02
IRFB17N60K
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 600 --- --- V VGS = 0V, ID = 250A --- 0.60 --- V/C Reference to 25C, I D = 1mA --- 0.35 0.42 VGS = 10V, ID = 10A 3.0 --- 5.0 V VDS = V GS, ID = 250A --- --- 50 A VDS = 600V, VGS = 0V --- --- 250 A VDS = 480V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.9 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 25 82 38 32 2700 240 21 2950 67 120 Max. Units Conditions --- S VDS = 50V, ID = 10A 99 ID = 17A 32 nC VDS = 480V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 17A ns --- RG = 7.5 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 17 --- --- showing the A G integral reverse --- --- 68 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 17A, VGS = 0V --- 520 780 ns TJ = 25C, IF = 17A --- 5620 8430 nC di/dt = 100A/s --- 580 870 ns TJ = 125C, IF = 17A --- 6470 9700 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 2.3mH, RG = 25, IAS = 17A,
ISD 17A, di/dt 380A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%.
TJ 150C
2
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IRFB17N60K
1000
VGS 15V 10V 8.0V 7.5V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
100
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
10
VGS 15V 10V 8.0V 7.5V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
1
5.5V
1
0.1
5.5V 20s PULSE WIDTH Tj = 25C
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
0.01 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
3.0
RDS(on) , Drain-to-Source On Resistance
ID = 17A
2.5
ID, Drain-to-Source Current ()
T J = 150C
10.0
VGS = 10V
2.0
1.0
T J = 25C
(Normalized)
1.5
1.0
0.1
0.0 5.0 6.0 7.0
VDS = 100V 20s PULSE WIDTH
8.0 9.0 10.0 11.0
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFB17N60K
100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 17A VDS= 480V VDS= 300V VDS= 120V
10000
16
C, Capacitance (pF)
Ciss
1000
12
100
Coss
8
10
Crss
4
1 1 10 100 1000
0 0 20 40 60 80 100 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10.0
ID, Drain-to-Source Current (A)
100
T J = 150C 1.0 TJ = 25C VGS = 0V 0.1 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V)
10
100sec
1 Tc = 25C Tj = 150C Single Pulse 1 10 100
1msec 10msec 1000 10000
0.1
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFB17N60K
18 16 14
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
ID , Drain Current (A)
12 10 8 6 4
- VDD
Fig 10a. Switching Time Test Circuit
VDS
2 0 25 50 75 100 125 150
90%
T J , Junction Temperature (C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFB17N60K
600
EAS, Single Pulse Avalanche Energy (mJ)
500
ID 7.6A 11A BOTTOM 17A
TOP
15V
400
VDS L
DRIVER
300
RG D.U.T
IAS
20V
200
tp
+ - VDD
A
100
0.01
Fig 12c. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
V(BR)DSS tp
I AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
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IRFB17N60K
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFB17N60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M
A
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER IRF1010 9246 9B 1M
DATE CODE (YYWW) YY = YEAR WW = WEEK
TO-220AB package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/02
8
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